Title

A 20-V CMOS-based monolithic bidirectional power switch

Authors

Authors

Y. Fu; X. Cheng; Y. Chen; J. J. Liou;Z. J. Shen

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

battery protection circuitry; bidirectional switch; on-resistance; power; MOSFET; Engineering, Electrical & Electronic

Abstract

Bidirectional power-switching devices are needed in many power-management applications, particularly in lithium-ion battery protection circuitry. In this letter, a monolithic planar bidirectional power switch fabricated with a simplified CMOS technology is introduced. The new four-terminal device provides a blocking voltage greater than 20 V and a low on-resistance in either direction between its two power terminals. Detailed device characterization and analysis reveal that the new device structure has good latch-up immunity even though it comprises several p-n junctions in close proximity. This new CMOS-compatible power switch can be used in discrete form or as part of a power IC.

Journal Title

Ieee Electron Device Letters

Volume

28

Issue/Number

2

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

174

Last Page

176

WOS Identifier

WOS:000243915100029

ISSN

0741-3106

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