A 20-V CMOS-based monolithic bidirectional power switch

    Authors

    Y. Fu; X. Cheng; Y. Chen; J. J. Liou;Z. J. Shen

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    battery protection circuitry; bidirectional switch; on-resistance; power; MOSFET; Engineering, Electrical & Electronic

    Abstract

    Bidirectional power-switching devices are needed in many power-management applications, particularly in lithium-ion battery protection circuitry. In this letter, a monolithic planar bidirectional power switch fabricated with a simplified CMOS technology is introduced. The new four-terminal device provides a blocking voltage greater than 20 V and a low on-resistance in either direction between its two power terminals. Detailed device characterization and analysis reveal that the new device structure has good latch-up immunity even though it comprises several p-n junctions in close proximity. This new CMOS-compatible power switch can be used in discrete form or as part of a power IC.

    Journal Title

    Ieee Electron Device Letters

    Volume

    28

    Issue/Number

    2

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    174

    Last Page

    176

    WOS Identifier

    WOS:000243915100029

    ISSN

    0741-3106

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