Authors

T. Anderson; L. Petit; N. Carlie; J. Choi; J. Hu; A. Agarwal; L. Kimerling; K. Richardson;M. Richardson

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Abstract

Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS4/2, GeS4, S-S and S3Ge-S-GeS3 units.

Journal Title

Optics Express

Volume

16

Issue/Number

24

Publication Date

1-1-2008

Document Type

Article

First Page

20081

Last Page

20098

WOS Identifier

WOS:000261561900068

ISSN

1094-4087

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