An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications

    Authors

    L. Lou;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    electrostatic discharge (ESD); high holding voltage; latch-up; low; trigger voltage; silicon-controlled rectifier (SCR); DEVICES; OUTPUT; Engineering, Electrical & Electronic

    Abstract

    A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mu m/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mu m to provide robust ESD-protection solutions.

    Journal Title

    Ieee Electron Device Letters

    Volume

    28

    Issue/Number

    12

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    1120

    Last Page

    1122

    WOS Identifier

    WOS:000251429800015

    ISSN

    0741-3106

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