Title

An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications

Authors

Authors

L. Lou;J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

electrostatic discharge (ESD); high holding voltage; latch-up; low; trigger voltage; silicon-controlled rectifier (SCR); DEVICES; OUTPUT; Engineering, Electrical & Electronic

Abstract

A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mu m/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mu m to provide robust ESD-protection solutions.

Journal Title

Ieee Electron Device Letters

Volume

28

Issue/Number

12

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

1120

Last Page

1122

WOS Identifier

WOS:000251429800015

ISSN

0741-3106

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