TCAD methodology for design of SCR devices for electrostatic discharge (ESD) applications

    Authors

    J. A. Salcedo; J. J. Liou; Z. W. Liu;J. E. Vinson

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    blocking junction; computer-aided design; electrostatic discharge (ESD); silicon-controlled. rectifier (SCR); trigger voltage; PROTECTION TECHNIQUES; MOBILITY MODEL; SIMULATION; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Realization of on-chip electrostatic discharge (ESD) protection requires extensive technical experience and know-how. A technology computer-aided design (TCAD) methodology aimed to assist in the design and implementation of robust ESD devices is developed and presented. The methodology provides a systematic and practical means for the evaluation and optimization.of ESD devices in a simulation environment. Advanced siliconcontrolled-rectifier devices are considered to illustrate the approach, and experimental data measured from these devices are also included in support of the TCAD development.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    54

    Issue/Number

    4

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    822

    Last Page

    832

    WOS Identifier

    WOS:000245327900026

    ISSN

    0018-9383

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