RF transistors: Recent developments and roadmap toward terahertz applications

    Authors

    F. Schwierz;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    RF transistors; microwave transistors; RF CMOS; SiGeHBT; ITRS targets; SIGE POWER HBT; F(T); GHZ; PERFORMANCE; TECHNOLOGY; MOSFETS; SIMULATION; EVOLUTION; COLLECTOR; CIRCUITS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper provides an overview on the status, development and performance of current and future RF transistors. The targets specified in the 2005 issue and the 2006 update of the International Technology Roadmap for Semiconductors (ITRS) are addressed and used as a blueprint, and potential challenges and problems to achieve these targets are discussed. Main emphasis is given to Si-based RF transistors, i.e., Si RF MOSFETs and SiGe HBTs, but relevant information on III-V RF transistors is also included. It is shown that Si-based RIF transistors are very fast and compete successfully with GaAs pHEMTs and GaAs HBTs. As the result of a qualitative discussion, reasons for the competitive performance of Si-based RF transistors are provided. (c) 2007 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    51

    Issue/Number

    8

    Publication Date

    1-1-2007

    Document Type

    Review

    Language

    English

    First Page

    1079

    Last Page

    1091

    WOS Identifier

    WOS:000249621000001

    ISSN

    0038-1101

    Share

    COinS