Title

Comparison of the work function of Pt-Ru binary metal alloys extracted from MOS capacitor and Schottky-barrier-diode measurements

Authors

Authors

R. M. Todi; M. S. Erickson; K. B. Sundaram; K. Barmak;K. R. Coffey

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

gate electrode; metal alloy; Pt-Ru; Schottky; work function; CMOS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

This paper describes a systematic comparison of work function for the Pt-Ru binary-alloy metals, extracted from capacitance-voltage (C-V) characteristics of MOS capacitors and the current-voltage (I-V) and C-V characteristics of Schottky-barrier diodes. Our results indicate that the work function of the Pt-Ru binary-alloy system can be tuned over the wide range of 4.8-5.2 eV. Furthermore, the results indicate that the change of film properties, i.e., resistivity, work function, and crystal structure, with composition is consistent with the equilibrium-phase diagram and that the work function in the face-centered cubic and the hexagonal-close-pack single-phase regions is only weakly dependent on composition while a strong dependence is observed in the intermediate compositional range. It is also observed that work-function values obtained from the Schottky I-V analysis are significantly lower than those extracted from the MOS C-V data.

Journal Title

Ieee Transactions on Electron Devices

Volume

54

Issue/Number

4

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

807

Last Page

813

WOS Identifier

WOS:000245327900024

ISSN

0018-9383

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