Comparison of the work function of Pt-Ru binary metal alloys extracted from MOS capacitor and Schottky-barrier-diode measurements

    Authors

    R. M. Todi; M. S. Erickson; K. B. Sundaram; K. Barmak;K. R. Coffey

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    gate electrode; metal alloy; Pt-Ru; Schottky; work function; CMOS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    This paper describes a systematic comparison of work function for the Pt-Ru binary-alloy metals, extracted from capacitance-voltage (C-V) characteristics of MOS capacitors and the current-voltage (I-V) and C-V characteristics of Schottky-barrier diodes. Our results indicate that the work function of the Pt-Ru binary-alloy system can be tuned over the wide range of 4.8-5.2 eV. Furthermore, the results indicate that the change of film properties, i.e., resistivity, work function, and crystal structure, with composition is consistent with the equilibrium-phase diagram and that the work function in the face-centered cubic and the hexagonal-close-pack single-phase regions is only weakly dependent on composition while a strong dependence is observed in the intermediate compositional range. It is also observed that work-function values obtained from the Schottky I-V analysis are significantly lower than those extracted from the MOS C-V data.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    54

    Issue/Number

    4

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    807

    Last Page

    813

    WOS Identifier

    WOS:000245327900024

    ISSN

    0018-9383

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