Effect of N-2/Ar gas mixture composition on the chemistry of SiCBN thin films prepared by RF reactive sputtering

    Authors

    A. Vijayakumar; R. M. Todi;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    RAY PHOTOELECTRON-SPECTROSCOPY; CARBONITRIDE CERAMICS; SI-(B-)C-N; CERAMICS; HIGH-TEMPERATURE; SILICON; STATE; BORON; XPS; POLYSILAZANES; NITRIDATION; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    In this work we report the deposition and characterization of amorphous thin films of silicon boron carbon nitride (SiCBN). The SiCBN thin films were deposited in a radio frequency (rf) magnetron sputtering system using reactive cosputtering of silicon carbide (SiC) and boron nitride (BN) targets. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform SiCBN films can be produced using this technique. (c) 2007 The Electrochemical Society.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    154

    Issue/Number

    4

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    H271

    Last Page

    H274

    WOS Identifier

    WOS:000244792200060

    ISSN

    0013-4651

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