Amorphous-SiCBN-B ased metal-semiconductor-metal photodetector for high-temperature applications

    Authors

    A. Vijayakumar; R. M. Todi;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    high temperature; metal-semiconductor-metal (MSM); photodetector (PD); SiCBN; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; Engineering, Electrical & Electronic

    Abstract

    A photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed using an amorphous SiCBN film. The amorphous SiCBN film was deposited on the silicon substrate using reactive RF magnetron sputtering. The optoelectronic performance of the SiCBN MSM devices has been examined through photocurrent measurements. Temperature effect, with respect to photocurrent ratios, has been studied. The detector sensitivity factor, which is determined through the PD current ratio, was greater than five at room temperature. Furthermore, the device showed an excellent current sensitivity factor that is greater than two even at a higher temperature of 200 degrees C. The improved performance of the device at higher temperatures could open avenues for high-temperature PD applications.

    Journal Title

    Ieee Electron Device Letters

    Volume

    28

    Issue/Number

    8

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    713

    Last Page

    715

    WOS Identifier

    WOS:000248315400015

    ISSN

    0741-3106

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