Title

Amorphous-SiCBN-B ased metal-semiconductor-metal photodetector for high-temperature applications

Authors

Authors

A. Vijayakumar; R. M. Todi;K. B. Sundaram

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

high temperature; metal-semiconductor-metal (MSM); photodetector (PD); SiCBN; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; Engineering, Electrical & Electronic

Abstract

A photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed using an amorphous SiCBN film. The amorphous SiCBN film was deposited on the silicon substrate using reactive RF magnetron sputtering. The optoelectronic performance of the SiCBN MSM devices has been examined through photocurrent measurements. Temperature effect, with respect to photocurrent ratios, has been studied. The detector sensitivity factor, which is determined through the PD current ratio, was greater than five at room temperature. Furthermore, the device showed an excellent current sensitivity factor that is greater than two even at a higher temperature of 200 degrees C. The improved performance of the device at higher temperatures could open avenues for high-temperature PD applications.

Journal Title

Ieee Electron Device Letters

Volume

28

Issue/Number

8

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

713

Last Page

715

WOS Identifier

WOS:000248315400015

ISSN

0741-3106

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