Abbreviated Journal Title
J. Appl. Phys.
Keywords
KAPITZA CONDUCTANCE; CONDUCTIVITY; Physics, Applied
Abstract
We determine the dependence of the interfacial conductance on twist angle for (001) symmetric twist grain boundaries (GBs) in diamond. We find that the conductances are extremely large, ranging from 7.7 to 17.6 GW/m(2) K. Nevertheless, when normalized to the single-crystal conductivity, the resulting Kapitza lengths are actually longer in diamond than in Si, indicating that the diamond GBs are relatively worse conductors of heat. This result is consistent with the poorer bonding across the diamond grain boundaries. We find that the interfacial conductance and Kapitza length can be well fitted by an extended Read-Shockley model.
Journal Title
Journal of Applied Physics
Volume
102
Issue/Number
6
Publication Date
1-1-2007
Document Type
Article
DOI Link
Language
English
First Page
7
WOS Identifier
ISSN
0021-8979
Recommended Citation
Watanabe, Taku; Ni, Boris; Phillpot, Simon R.; Schelling, Patrick K.; and Keblinski, Pawel, "Thermal conductance across grain boundaries in diamond from molecular dynamics simulation" (2007). Faculty Bibliography 2000s. 7778.
https://stars.library.ucf.edu/facultybib2000/7778
Comments
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