Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy

    Authors

    Y. L. Wu; S. T. Lin; T. M. Chang;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    INDUCED LEAKAGE CURRENT; THIN GATE OXIDES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    In this work, we investigated the reliability of ultrathin silicon dioxide films subject to an irradiation-then-stress treatment using for the first time a conductive atomic force microscopy (AFM). We found that the conductive AFM gives accurate and reliable characterization of the pre- and post-treatment of oxide films. Based on the conductive AFM measured I-V curves, we concluded that the increased number of defects generated in the oxide bulk is the main mechanism contributing to the oxide degradation after the irradiation-then-stress treatment. (c) 2006 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    47

    Issue/Number

    2-3

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    419

    Last Page

    421

    WOS Identifier

    WOS:000244598900038

    ISSN

    0026-2714

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