Controlled Al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors

    Authors

    W. Y. Yang; H. T. Wang; S. Z. Liu; Z. P. Xie;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Phys. Chem. B

    Keywords

    CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; ZNO NANOWIRES; ALPHA-SI3N4 NANOBELTS; OXIDE NANOWIRES; GROWTH; THIN; NANORODS; PHOTOLUMINESCENCE; NANOTUBES; Chemistry, Physical

    Abstract

    Al-doped single-crystalline Si3N4 nanowires were synthesized by catalyst-assisted pyrolysis of polymeric precursors. The doping levels can be controlled by tailoring the Al concentration in the precursors. It is found that the Al concentration has a significant effect on the shape, sizes, and phase compositions of the synthesized Si3N4 low-dimensional nanomaterials. The photoluminescence measurements revealed that the Al dopants have a profound effect on the emission behavior. The current study provides a simple way to realize the controlled doping in Si3N4 nanomaterials, which could be useful for applications in optoelectronic nanodevices.

    Journal Title

    Journal of Physical Chemistry B

    Volume

    111

    Issue/Number

    16

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    4156

    Last Page

    4160

    WOS Identifier

    WOS:000245797700021

    ISSN

    1520-6106

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