CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect

    Authors

    C. Z. Yu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    CMOS oscillators; dielectric breakdown (BD); fast transient charge; effect; leakage current; low-noise amplifier (LNA); reliability; OXIDE BREAKDOWN; VOLTAGE STRESS; RF PERFORMANCE; MOS DEVICES; MODEL; RELIABILITY; DIELECTRICS; EXTRACTION; SILICON; IMPACT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behaviour after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    54

    Issue/Number

    1

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    59

    Last Page

    67

    WOS Identifier

    WOS:000243280500009

    ISSN

    0018-9383

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