Title

CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect

Authors

Authors

C. Z. Yu;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

CMOS oscillators; dielectric breakdown (BD); fast transient charge; effect; leakage current; low-noise amplifier (LNA); reliability; OXIDE BREAKDOWN; VOLTAGE STRESS; RF PERFORMANCE; MOS DEVICES; MODEL; RELIABILITY; DIELECTRICS; EXTRACTION; SILICON; IMPACT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behaviour after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier.

Journal Title

Ieee Transactions on Electron Devices

Volume

54

Issue/Number

1

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

59

Last Page

67

WOS Identifier

WOS:000243280500009

ISSN

0018-9383

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