Structure and electronic transport properties of Si-(B)-C-N ceramics

    Authors

    A. M. Hermann; Y. T. Wang; P. A. Ramakrishnan; D. Balzar; L. N. An; C. Haluschka;R. Riedel

    Comments

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    Abbreviated Journal Title

    J. Am. Ceram. Soc.

    Keywords

    SILICON CARBONITRIDE; HIGH-TEMPERATURE; POLYSILAZANES; VISCOSITY; Materials Science, Ceramics

    Abstract

    The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

    Journal Title

    Journal of the American Ceramic Society

    Volume

    84

    Issue/Number

    10

    Publication Date

    1-1-2001

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    2260

    Last Page

    2264

    WOS Identifier

    WOS:000171634600020

    ISSN

    0002-7820

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