Wet chemical etching of LiGaO2 and LiAlO2

    Authors

    C. H. Hsu; K. P. Ip; J. W. Johnson; S. N. G. Chu; O. Kryliouk; S. J. Pearton; L. Li; B. H. T. Chai; T. J. Anderson;F. Ren

    Comments

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    Abbreviated Journal Title

    Electrochem. Solid State Lett.

    Keywords

    GALLIUM NITRIDE; SINGLE-CRYSTALS; PHASE EPITAXY; BUFFER LAYERS; GAN; GROWTH; DEPOSITION; SUBSTRATE; Electrochemistry; Materials Science, Multidisciplinary

    Abstract

    The effects of temperature and wet chemical etching solution on the etch rate of LiGaO2 and LiAlO2 were investigated. The solutions studied were H2SO4, H3PO4, and HCl. Etch rates from 500 to 73,000 Angstrom /min and 100 to 9,500 Angstrom /min were obtained for LiGaO2 and LiAlO2, respectively. Arrhenius plots were used to examine the rate-limiting step for each etchant. (C) 2001 The Electrochemical Society.

    Journal Title

    Electrochemical and Solid State Letters

    Volume

    4

    Issue/Number

    6

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    C35

    Last Page

    C38

    WOS Identifier

    WOS:000168107000007

    ISSN

    1099-0062

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