Title

Wet chemical etching of LiGaO2 and LiAlO2

Authors

Authors

C. H. Hsu; K. P. Ip; J. W. Johnson; S. N. G. Chu; O. Kryliouk; S. J. Pearton; L. Li; B. H. T. Chai; T. J. Anderson;F. Ren

Comments

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Abbreviated Journal Title

Electrochem. Solid State Lett.

Keywords

GALLIUM NITRIDE; SINGLE-CRYSTALS; PHASE EPITAXY; BUFFER LAYERS; GAN; GROWTH; DEPOSITION; SUBSTRATE; Electrochemistry; Materials Science, Multidisciplinary

Abstract

The effects of temperature and wet chemical etching solution on the etch rate of LiGaO2 and LiAlO2 were investigated. The solutions studied were H2SO4, H3PO4, and HCl. Etch rates from 500 to 73,000 Angstrom /min and 100 to 9,500 Angstrom /min were obtained for LiGaO2 and LiAlO2, respectively. Arrhenius plots were used to examine the rate-limiting step for each etchant. (C) 2001 The Electrochemical Society.

Journal Title

Electrochemical and Solid State Letters

Volume

4

Issue/Number

6

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

C35

Last Page

C38

WOS Identifier

WOS:000168107000007

ISSN

1099-0062

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