Wet chemical etching of LiGaO2 and LiAlO2
Abbreviated Journal Title
Electrochem. Solid State Lett.
GALLIUM NITRIDE; SINGLE-CRYSTALS; PHASE EPITAXY; BUFFER LAYERS; GAN; GROWTH; DEPOSITION; SUBSTRATE; Electrochemistry; Materials Science, Multidisciplinary
The effects of temperature and wet chemical etching solution on the etch rate of LiGaO2 and LiAlO2 were investigated. The solutions studied were H2SO4, H3PO4, and HCl. Etch rates from 500 to 73,000 Angstrom /min and 100 to 9,500 Angstrom /min were obtained for LiGaO2 and LiAlO2, respectively. Arrhenius plots were used to examine the rate-limiting step for each etchant. (C) 2001 The Electrochemical Society.
Electrochemical and Solid State Letters
"Wet chemical etching of LiGaO2 and LiAlO2" (2001). Faculty Bibliography 2000s. 8038.