RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology

    Authors

    Q. Li; J. L. Zhang; W. Li; J. S. Yuan; Y. Chen;A. S. Oates

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Microw. Theory Tech.

    Keywords

    CMOS; constant voltage stress; hot carriers; low-noise amplifier; power; amplifier; scattering parameters; soft breakdown; Engineering, Electrical & Electronic

    Abstract

    A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RE characteristics before and after stress are extracted from the experimental data. The effects of SBD and HC stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.

    Journal Title

    Ieee Transactions on Microwave Theory and Techniques

    Volume

    49

    Issue/Number

    9

    Publication Date

    1-1-2001

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1546

    Last Page

    1551

    WOS Identifier

    WOS:000170643600006

    ISSN

    0018-9480

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