Title

AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability

Authors

Authors

J. J. Liou;C. I. Huang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. J.

Keywords

heterojunction bipolar transistor; thermal effect; semiconductor; HBTS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology

Abstract

AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, wide linearity, and high current handling capability. As a result, the device has gained popularity in designing power amplifiers for RF and microwave applications. However, the high power in the HBT, together with the poor thermal conductivity of GaAs, gives rise to significant thermal effect and reduced reliability in such a device. This paper presents an overview on the simulation, modeling, and reliability of AlGaAs/GaAs HBTs. Emphasis will be placed on the effects of thermal-electrical interacting behavior on the de and ac performance of the HBT. The thermal-induced degradation process in the HBT will also be addressed and analyzed. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Journal

Volume

32

Issue/Number

5-6

Publication Date

1-1-2001

Document Type

Article; Proceedings Paper

Language

English

First Page

419

Last Page

431

WOS Identifier

WOS:000169324600004

ISSN

0026-2692

Share

COinS