AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability

    Authors

    J. J. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Microelectron. J.

    Keywords

    heterojunction bipolar transistor; thermal effect; semiconductor; HBTS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology

    Abstract

    AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, wide linearity, and high current handling capability. As a result, the device has gained popularity in designing power amplifiers for RF and microwave applications. However, the high power in the HBT, together with the poor thermal conductivity of GaAs, gives rise to significant thermal effect and reduced reliability in such a device. This paper presents an overview on the simulation, modeling, and reliability of AlGaAs/GaAs HBTs. Emphasis will be placed on the effects of thermal-electrical interacting behavior on the de and ac performance of the HBT. The thermal-induced degradation process in the HBT will also be addressed and analyzed. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Journal

    Volume

    32

    Issue/Number

    5-6

    Publication Date

    1-1-2001

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    419

    Last Page

    431

    WOS Identifier

    WOS:000169324600004

    ISSN

    0026-2692

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