New approach for defining the threshold voltage of MOSFETs

    Authors

    J. A. Salcedo; A. Ortiz-Conde; F. J. G. Sanchez; J. Muci; J. J. Liou;Y. Yue

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to cause the surface potential to be equal to twice the Fermi potential in the bulk of semiconductor. Such a definition, although widely used for modeling long-channel MOSFET's, becomes increasingly questionable for modern devices with diminishing channel lengths, In this paper a new approach is proposed which defines the threshold voltage based on the intersection of the two asymptotes of the surface potential for the depletion and strong inversion regions. The approach is tested in simulation environment for MOS devices having different channel lengths, oxide thicknesses, and substrate doping concentrations.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    48

    Issue/Number

    4

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    809

    Last Page

    813

    WOS Identifier

    WOS:000167985100028

    ISSN

    0018-9383

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