A generalized finite element method for hydrodynamic modeling of short-channel devices

    Authors

    M. Shen; M. C. Cheng;J. J. Liou

    Abbreviated Journal Title

    VLSI Des.

    Keywords

    hydrodynamic model; device simulation; least squares finite element; SEMICONDUCTOR-DEVICES; EQUATIONS; Computer Science, Hardware & Architecture; Engineering, Electrical &; Electronic

    Abstract

    A finite element method based on the least-squares scheme is developed for hydrodynamic simulation of two-dimensional short-channel semiconductor devices. Although this general-purpose finite element method has been shown in fluid dynamics to be more universal to flow problems than other finite element approaches and has been applied in recent years to a wide range of problems in fluid dynamics, it is still unfamiliar to the semiconductor device community. Application of the developed hydrodynamic least squares finite element method (LSFEM) to simulation of a 2D MESFET with a deep-submicron gate has demonstrated its robustness and effectiveness for the hydrodynamic device simulation.

    Journal Title

    Vlsi Design

    Volume

    13

    Issue/Number

    1-4

    Publication Date

    1-1-2001

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    79

    Last Page

    84

    WOS Identifier

    WOS:000173295000012

    ISSN

    1065-514X

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