Electrical and temperature stress effects on class-AB power amplifier performances

    Authors

    C. Z. Yu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    class-AB power amplifier (PA); conduction angle; power efficiency; RF; simulation; third-order intercept point; INTERFACE-STATE GENERATION; HOT-CARRIER DEGRADATION; CMOS TECHNOLOGY; SOFT-BREAKDOWN; MOSFET; TRANSISTORS; NMOSFETS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Normalized degradations of drain efficiency and output power as a function of conduction angle, maximum drain current, and maximum output voltage are modeled. Good agreement between the model predictions and Cadence radio-frequency simulation results is obtained. The output power and efficiency of class-AB power amplifiers (PAs) degrade with channel hot electron stress due to reduced conduction angle, drain current, and output voltage. The degradation is enhanced at high temperature. In addition, the PA third-order input intercept point and adjacent channel power ratio all decrease with stress.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    54

    Issue/Number

    6

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    1346

    Last Page

    1350

    WOS Identifier

    WOS:000246929200010

    ISSN

    0018-9383

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