Title

Electrical and temperature stress effects on class-AB power amplifier performances

Authors

Authors

C. Z. Yu;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

class-AB power amplifier (PA); conduction angle; power efficiency; RF; simulation; third-order intercept point; INTERFACE-STATE GENERATION; HOT-CARRIER DEGRADATION; CMOS TECHNOLOGY; SOFT-BREAKDOWN; MOSFET; TRANSISTORS; NMOSFETS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Normalized degradations of drain efficiency and output power as a function of conduction angle, maximum drain current, and maximum output voltage are modeled. Good agreement between the model predictions and Cadence radio-frequency simulation results is obtained. The output power and efficiency of class-AB power amplifiers (PAs) degrade with channel hot electron stress due to reduced conduction angle, drain current, and output voltage. The degradation is enhanced at high temperature. In addition, the PA third-order input intercept point and adjacent channel power ratio all decrease with stress.

Journal Title

Ieee Transactions on Electron Devices

Volume

54

Issue/Number

6

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

1346

Last Page

1350

WOS Identifier

WOS:000246929200010

ISSN

0018-9383

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