Evaluating MOSFET harmonic distortion by successive integration of the I-V characteristics

    Authors

    R. Salazar; A. Ortiz-Conde; F. J. Garcia-Sancliez; C. S. Ho;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    integral non-linearity function; harmonic distortion; THD; IP2; IP3; SOIFD TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A new method, which we have named "Full Successive Integrals Method" (FSIM), is presented for evaluating harmonic distortion of semiconductor devices from their static I-V characteristics. To assess the method's applicability, it is used to calculate the harmonic distortion components (H.) from the measured output characteristics of several experimental n-MOSFETs with various channel lengths. The resulting values of the harmonic components are compared to, and match very well, those obtained through conventional Fourier analysis techniques. The proposed method's main appeal is that its implementation is fast and straight forward, and inherently filters out measurement noise. It can be used to calculate distortion harmonics for any desired input level, without having to deal with AC signals or having to perform lengthy Fourier type analysis. (C) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    52

    Issue/Number

    7

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    1092

    Last Page

    1098

    WOS Identifier

    WOS:000257972500018

    ISSN

    0038-1101

    Share

    COinS