Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances

    Authors

    J. S. Yuan; J. Ma; W. K. Yeh;C. W. Hsu

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Class-E power amplifier; Hot electron stress; LNA-mixer; Noise figure; Power efficiency; S-parameters; VOLTAGE STRESS; CARRIER STRESS; DEGRADATION; TRANSISTORS; TECHNOLOGY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit. (C) 2010 Elsevier Ltd All rights reserved

    Journal Title

    Microelectronics Reliability

    Volume

    50

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    807

    Last Page

    812

    WOS Identifier

    WOS:000278644400009

    ISSN

    0026-2714

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