Title

A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces

Authors

Authors

P. Zhang; A. Vincent; A. Kumar; S. Seal;H. J. Cho

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

Hydrogen sensor; interdigitated electrodes (IDEs); In(2)O(3)-doped; SnO(2); Schottky barrier; THIN-FILM; DIODE; SENSOR; Engineering, Electrical & Electronic

Abstract

The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium- oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of similar to 2300 and a short response time of similar to 127 s were recorded.

Journal Title

Ieee Electron Device Letters

Volume

31

Issue/Number

7

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

770

Last Page

772

WOS Identifier

WOS:000281833100046

ISSN

0741-3106

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