A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces

    Authors

    P. Zhang; A. Vincent; A. Kumar; S. Seal;H. J. Cho

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Hydrogen sensor; interdigitated electrodes (IDEs); In(2)O(3)-doped; SnO(2); Schottky barrier; THIN-FILM; DIODE; SENSOR; Engineering, Electrical & Electronic

    Abstract

    The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium- oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of similar to 2300 and a short response time of similar to 127 s were recorded.

    Journal Title

    Ieee Electron Device Letters

    Volume

    31

    Issue/Number

    7

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    770

    Last Page

    772

    WOS Identifier

    WOS:000281833100046

    ISSN

    0741-3106

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