Title
A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces
Abbreviated Journal Title
IEEE Electron Device Lett.
Keywords
Hydrogen sensor; interdigitated electrodes (IDEs); In(2)O(3)-doped; SnO(2); Schottky barrier; THIN-FILM; DIODE; SENSOR; Engineering, Electrical & Electronic
Abstract
The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium- oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of similar to 2300 and a short response time of similar to 127 s were recorded.
Journal Title
Ieee Electron Device Letters
Volume
31
Issue/Number
7
Publication Date
1-1-2010
Document Type
Article
Language
English
First Page
770
Last Page
772
WOS Identifier
ISSN
0741-3106
Recommended Citation
"A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces" (2010). Faculty Bibliography 2010s. 1012.
https://stars.library.ucf.edu/facultybib2010/1012
Comments
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