Authors

M. Aminpour; O. Trushin;T. S. Rahman

Comments

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Abbreviated Journal Title

Phys. Rev. B

Keywords

ALLOYS; GROWTH; STRAIN; MULTILAYERS; ARRAYS; LAYER; Physics, Condensed Matter

Abstract

We apply molecular dynamics and molecular static methods to study the effect of misfit dislocations on adatom diffusion in close proximity to the dislocation core in heteroepitaxial systems, using many-body interaction potentials. Our system consists of several layers (three-seven) of Cu on top of a Ni(111) substrate. The misfit dislocations are created with the core located at the interface between the Cu film and the Ni substrate, using the repulsive biased potential method described earlier. We find that presence of the defect under the surface strongly affects the adatom trajectory, creating anisotropy in atomic diffusion, independent of the thickness of the Cu film. We also calculate the potential energy surface available to the adatom and compare the energy barriers for adatom diffusion in the proximity of the core region and on the defect-free surface.

Journal Title

Physical Review B

Volume

84

Issue/Number

3

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000293304200024

ISSN

1098-0121

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