Adaptive Gate Bias for Power Amplifier Temperature Compensation

    Authors

    S. Y. Chen;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Bias circuit; hot electron; mixed-mode simulation; output power; power-added efficiency; power amplifier (PA); self-heating; temperature; compensation; DEVICE SIMULATION; CMOS CIRCUITS; STRAINED-SI; MOSFETS; MOBILITY; IMPACT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    11

    Issue/Number

    3

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    442

    Last Page

    449

    WOS Identifier

    WOS:000294856900011

    ISSN

    1530-4388

    Share

    COinS