Development of a New pHEMT-Based Electrostatic Discharge Protection Structure

    Authors

    Q. Cui; C. S. Cheng; J. J. Liou;H. C. Chiu

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Charged device model (CDM); electrostatic discharge (ESD); high-electron; mobility transistor (HEMT); human body model (HBM); Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices. This paper develops an improved ESD protection clamp based on a novel multigate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times higher than the conventional SG pHEMT clamp under the human body model stress. Moreover, the new ESD clamp shows promising results when characterized under the charged device model stress. The parasitic capacitance of the new ESD clamp is also measured to assess its suitability for high-frequency ESD applications.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    9

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    2974

    Last Page

    2980

    WOS Identifier

    WOS:000294175900023

    ISSN

    0018-9383

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