A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

    Authors

    F. J. Garcia-Sanchez; A. D. Latorre-Rey; W. Liu; W. C. Chen; H. C. Lin; J. J. Liou; J. Muci;A. Ortiz-Conde

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Nanowire MOSFETs; Polysilicon; Compact model; Lambert function; Parameter extraction; THIN-FILM TRANSISTORS; LAMBERT-W-FUNCTION; THRESHOLD VOLTAGE; SUBTHRESHOLD BEHAVIOR; COMPACT MODEL; SOI MOSFETS; CHANNEL; FABRICATION; EXTRACTION; SIMULATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation. The model is tested on measured transfer characteristics of experimental devices. The extracted model parameters are used to generate transfer characteristics playbacks that are then compared to the measured data to validate the proposed model's adequacy for these devices. (C) 2011 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    63

    Issue/Number

    1

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    22

    Last Page

    26

    WOS Identifier

    WOS:000295066400006

    ISSN

    0038-1101

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