Title

Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses

Authors

Authors

D. F. Ellis; Y. Z. Zhou; J. A. Salcedo; J. J. Hajjar;J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Charged device model (CDM); gate oxide breakdown (GOB); power law (PL); time-dependent dielectric breakdown (TDDB); very fast transmission line; pulse (VFTLP); POWER-LAW; RELIABILITY; DIELECTRICS; SIO2-FILMS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

A reliable dielectric breakdown model under transient stresses via an extension of the power law is demonstrated. The model, which is based on the percolation model and the assumption of no significant detrapping, is successfully used in ramped voltage stress breakdown analysis. A demonstration of the model's validity consists of applying repetitive time-variant voltage waveforms-pulses, sine waves, ramps, and noise-until breakdown and, consequently, comparing prediction to reality. The breakdown distribution is initially derived from DC measurements, with the model predicting both the center and the shape of the distribution.

Journal Title

Ieee Transactions on Electron Devices

Volume

57

Issue/Number

9

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

2296

Last Page

2305

WOS Identifier

WOS:000283138200032

ISSN

0018-9383

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