Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses

    Authors

    D. F. Ellis; Y. Z. Zhou; J. A. Salcedo; J. J. Hajjar;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Charged device model (CDM); gate oxide breakdown (GOB); power law (PL); time-dependent dielectric breakdown (TDDB); very fast transmission line; pulse (VFTLP); POWER-LAW; RELIABILITY; DIELECTRICS; SIO2-FILMS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A reliable dielectric breakdown model under transient stresses via an extension of the power law is demonstrated. The model, which is based on the percolation model and the assumption of no significant detrapping, is successfully used in ramped voltage stress breakdown analysis. A demonstration of the model's validity consists of applying repetitive time-variant voltage waveforms-pulses, sine waves, ramps, and noise-until breakdown and, consequently, comparing prediction to reality. The breakdown distribution is initially derived from DC measurements, with the model predicting both the center and the shape of the distribution.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    57

    Issue/Number

    9

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    2296

    Last Page

    2305

    WOS Identifier

    WOS:000283138200032

    ISSN

    0018-9383

    Share

    COinS