Theoretical and Experimental Study of a Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator

    Authors

    N. Hoghooghi;P. J. Delfyett

    Comments

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    Abbreviated Journal Title

    J. Lightwave Technol.

    Keywords

    Injection locked lasers; modulators; semiconductor lasers; INJECTION LOCKING; STABILITY; LASERS; Engineering, Electrical & Electronic; Optics; Telecommunications

    Abstract

    The phase response of an injection locked semiconductor laser that is used as the phase modulator in a resonant cavity linear interferometric intensity modulator is studied in detail. It is shown that, signal-to-intermodulation ratio of such a modulator is affected by the injection ratio, linewidth enhancement factor of the semiconductor laser, residual amplitude modulation, depth of phase modulation, and linearity of the resonant cavity response. Experimental measurements of the signal-to-intermodulation ratio of this modulator using a semiconductor Fabry-Perot laser as the resonant cavity are in good agreement with the theoretically predicted values.

    Journal Title

    Journal of Lightwave Technology

    Volume

    29

    Issue/Number

    22

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    3421

    Last Page

    3427

    WOS Identifier

    WOS:000297052800001

    ISSN

    0733-8724

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