Abbreviated Journal Title
J. Appl. Phys.
Keywords
GATE OXIDE RELIABILITY; DEPENDENCE; Physics, Applied
Abstract
Ultrathin silicon oxide film for nano-electromechanical system (NEMS) applications is investigated under electrostatic discharge (ESD) stress using a transmission line pulse (TLP) tester. The measured breakdown voltage and transient response are analyzed. The results show that the voltage stress time has a significant effect on the breakdown voltage. By shortening the stress time, the breakdown voltage increases by 2-3 times. With the area shrinking breakdown voltage increases, and there is a critical value, below which the breakdown voltage increases dramatically with decreasing area. It is possible to enhance the ESD robustness by using a multiple small-area dielectric layer structure. Shorten ESD pulse rise-time induces a higher overshoot current and then accelerates oxide failure, resulting in a lower breakdown voltage for a faster pulse.
Journal Title
Journal of Applied Physics
Volume
110
Issue/Number
5
Publication Date
1-1-2011
Document Type
Article
DOI Link
Language
English
First Page
4
WOS Identifier
ISSN
0021-8979
Recommended Citation
Jin, Hao; Dong, Shurong; Miao, Meng; Liou, Juin Jei; and Yang, Cary Y., "Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress" (2011). Faculty Bibliography 2010s. 1437.
https://stars.library.ucf.edu/facultybib2010/1437
Comments
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