High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors

    Authors

    K. J. Kormondy; P. Stokes;S. I. Khondaker

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Nanotechnology

    Keywords

    DIELECTROPHORESIS; CIRCUITS; DENSITY; ARRAYS; LOGIC; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1 V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8 x 10(5). The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices.

    Journal Title

    Nanotechnology

    Volume

    22

    Issue/Number

    41

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    5

    WOS Identifier

    WOS:000295163900006

    ISSN

    0957-4484

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.