High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors

    Authors

    K. J. Kormondy; P. Stokes;S. I. Khondaker

    Comments

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    Abbreviated Journal Title

    Nanotechnology

    Keywords

    DIELECTROPHORESIS; CIRCUITS; DENSITY; ARRAYS; LOGIC; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1 V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8 x 10(5). The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices.

    Journal Title

    Nanotechnology

    Volume

    22

    Issue/Number

    41

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    5

    WOS Identifier

    WOS:000295163900006

    ISSN

    0957-4484

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