Authors

Y. Lin; M. Shatkhin; E. Flitsiyan; L. Chernyak; Z. Dashevsky; S. Chu;J. L. Liu

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

ZINC-OXIDE; THIN-FILMS; PHOSPHORUS; Physics, Applied

Abstract

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 mu m thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74 +/- 5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247 +/- 10 meV, likely related to Sb(Zn)-2V(Zn) acceptor-complex.

Journal Title

Journal of Applied Physics

Volume

109

Issue/Number

1

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000286219300168

ISSN

0021-8979

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