Study of Organic Thin-Film Transistors Under Electrostatic Discharge Stresses

    Authors

    W. Liu; J. J. Liou; K. Kuribara; K. Fukuda; T. Sekitani; T. Someya; J. Chung; Y. H. Jeong; Z. X. Wang;C. L. Lin

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Degradation; electrostatic discharge (ESD); organic thin-film transistor; (OTFT); Engineering, Electrical & Electronic

    Abstract

    Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first time under the electrostatic discharge (ESD) stresses. The measurements are conducted using the transmission line pulsing (TLP) tester which generates the human body model equivalent pulses. The ESD behaviors and tolerances of OTFTs having different dimensions and gate biasing conditions are investigated. OTFT's failure mechanism and dc performance degradation due to the ESD stresses are also studied.

    Journal Title

    Ieee Electron Device Letters

    Volume

    32

    Issue/Number

    7

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    967

    Last Page

    969

    WOS Identifier

    WOS:000292165200045

    ISSN

    0741-3106

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