Reliability analysis of MOS varactor in CMOS LC VCO

    Authors

    Y. D. Liu

    Comments

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    Abbreviated Journal Title

    Microelectron. J.

    Keywords

    Reliability; Voltage-controlled oscillator (VCO); Phase noise; Positive-bias temperature instability (PBTI); Channel hot electron; (CHE); Oxide breakdown; PHASE NOISE; GATE OXIDE; OSCILLATORS; RF; DEGRADATION; TECHNOLOGY; DEVICES; PBTI; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology

    Abstract

    The paper investigates the reliability of MOS varactor tuned voltage-controlled oscillators (VCO). Due to the stress induced threshold voltage shift of the MOS varactor, the resonant tank degrades and the center frequency and phase noise of VCO deviate. The behavior is modeled and an adaptive body biasing scheme is proposed to make VCO resilient to reliability. In the mean time it does not degrade the VCO performance. An LC VCO at 24 GHz carrier frequency with adaptive body biasing is compared with VCO without such biasing design in PTM 65 nm technology. The ADS simulation results show that the biasing design helps improve the robustness of the VCO in resonant frequency. The design reduces the frequency sensitivity of VCO by 20% when subjected to threshold voltage degradation. (C) 2010 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Journal

    Volume

    42

    Issue/Number

    2

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    330

    Last Page

    333

    WOS Identifier

    WOS:000287548200013

    ISSN

    0026-2692

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