Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing

    Authors

    O. Lupan; T. Pauporte; I. M. Tiginyanu; V. V. Ursaki; H. Heinrich;L. Chow

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.

    Keywords

    ZnO nanowires; Electrodeposition; Photoluminescence; Annealing; Electrolyte-Si junction; ZnO/Si heterojunction; RESONANT RAMAN-SCATTERING; LIGHT-EMITTING-DIODES; ZINC-OXIDE; HYDROGEN-PEROXIDE; THIN-FILMS; ROOM-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; FABRICATION; NANORODS; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(111) and p-Si(111). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (111) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 degrees C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction. (C) 2011 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering B-Advanced Functional Solid-State Materials

    Volume

    176

    Issue/Number

    16

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    1277

    Last Page

    1284

    WOS Identifier

    WOS:000296122300005

    ISSN

    0921-5107

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