Title

Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing

Authors

Authors

O. Lupan; T. Pauporte; I. M. Tiginyanu; V. V. Ursaki; H. Heinrich;L. Chow

Comments

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Abbreviated Journal Title

Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.

Keywords

ZnO nanowires; Electrodeposition; Photoluminescence; Annealing; Electrolyte-Si junction; ZnO/Si heterojunction; RESONANT RAMAN-SCATTERING; LIGHT-EMITTING-DIODES; ZINC-OXIDE; HYDROGEN-PEROXIDE; THIN-FILMS; ROOM-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; FABRICATION; NANORODS; Materials Science, Multidisciplinary; Physics, Condensed Matter

Abstract

Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(111) and p-Si(111). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (111) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 degrees C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction. (C) 2011 Elsevier B.V. All rights reserved.

Journal Title

Materials Science and Engineering B-Advanced Functional Solid-State Materials

Volume

176

Issue/Number

16

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

1277

Last Page

1284

WOS Identifier

WOS:000296122300005

ISSN

0921-5107

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