Authors

P. Onufrijevs; T. Serevicius; P. Scajev; G. Manolis; A. Medvids; L. Chernyak; E. Kuokstis; C. C. Yang;K. Jarasiunas

Comments

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Abbreviated Journal Title

Acta Phys. Pol. A

Keywords

STIMULATED-EMISSION; EPITAXIAL LAYERS; PHOTOLUMINESCENCE; Physics, Multidisciplinary

Abstract

We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.

Journal Title

Acta Physica Polonica A

Volume

119

Issue/Number

2

Publication Date

1-1-2011

Document Type

Article; Proceedings Paper

Language

English

First Page

274

Last Page

276

WOS Identifier

WOS:000287288500058

ISSN

0587-4246

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