Boron clustering in implanted NiSi

    Authors

    A. Portavoce; I. Blum; D. Mangelinck; K. Hoummada; L. Chow; V. Carron;J. L. Labar

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Scr. Mater.

    Keywords

    Ni-suilcides; Implantation; Boron; Cluster; SILICIDED METAL GATES; DIFFUSION; SEGREGATION; DOPANTS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

    Abstract

    B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO(2)/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

    Journal Title

    Scripta Materialia

    Volume

    64

    Issue/Number

    9

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    828

    Last Page

    831

    WOS Identifier

    WOS:000288738400008

    ISSN

    1359-6462

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.