Boron clustering in implanted NiSi

    Authors

    A. Portavoce; I. Blum; D. Mangelinck; K. Hoummada; L. Chow; V. Carron;J. L. Labar

    Comments

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    Abbreviated Journal Title

    Scr. Mater.

    Keywords

    Ni-suilcides; Implantation; Boron; Cluster; SILICIDED METAL GATES; DIFFUSION; SEGREGATION; DOPANTS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

    Abstract

    B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO(2)/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

    Journal Title

    Scripta Materialia

    Volume

    64

    Issue/Number

    9

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    828

    Last Page

    831

    WOS Identifier

    WOS:000288738400008

    ISSN

    1359-6462

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