Title

Boron clustering in implanted NiSi

Authors

Authors

A. Portavoce; I. Blum; D. Mangelinck; K. Hoummada; L. Chow; V. Carron;J. L. Labar

Comments

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Abbreviated Journal Title

Scr. Mater.

Keywords

Ni-suilcides; Implantation; Boron; Cluster; SILICIDED METAL GATES; DIFFUSION; SEGREGATION; DOPANTS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

Abstract

B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO(2)/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Journal Title

Scripta Materialia

Volume

64

Issue/Number

9

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

828

Last Page

831

WOS Identifier

WOS:000288738400008

ISSN

1359-6462

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