Fabrication of Organic Field Effect Transistor by Directly Grown Poly(3 Hexylthiophene) Crystalline Nanowires on Carbon Nanotube Aligned Array Electrode

    Authors

    B. K. Sarker; J. H. Liu; L. Zhai;S. I. Khondaker

    Comments

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    Abbreviated Journal Title

    ACS Appl. Mater. Interfaces

    Keywords

    carbon nanotube electrodes; polymer nanowires; polythiophene; organic; field effect transistor; solution processing; charge carrier injection; THIN-FILM TRANSISTORS; LEVEL ALIGNMENT; POLY(3-HEXYLTHIOPHENE); MORPHOLOGY; INJECTION; MOLECULES; METAL; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary

    Abstract

    We fabricated organic field effect transistors (OFETs) by directly growing poly (3-hexylthiophne) (P3HT) crystalline nanowires on solution processed aligned array single walled carbon nanotubes (SWNT) interdigitated electrodes by exploiting strong pi-pi interaction for both efficient charge injection and transport. We also compared the device properties of OFETs using SWNT electrodes with control OFETs of P3HT nanowires deposited on gold electrodes. Electron transport measurements on 28 devices showed that, compared to the OFETs with gold electrodes, the OFETs with SWNT electrodes have better mobility and better current on-off ratio with a maximum of 0.13 cm(2)/(V s) and 3.1 x 10(5), respectively. The improved device characteristics with SWNT electrodes were also demonstrated by the improved charge injection and the absence of short channel effect, which was dominant in gold electrode OFETs. The enhancement of the device performance can be attributed to the improved interfacial contact between SWNT electrodes and the crystalline P3HT nanowires as well as the improved morphology of P3HT due to one-dimensional crystalline nanowire structure.

    Journal Title

    Acs Applied Materials & Interfaces

    Volume

    3

    Issue/Number

    4

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    1180

    Last Page

    1185

    WOS Identifier

    WOS:000289762400036

    ISSN

    1944-8244

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