Abbreviated Journal Title
J. Appl. Phys.
Keywords
DIFFUSION LENGTH; GAN; Physics, Applied
Abstract
Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 +/- 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 +/- 20 meV, indicating the possible involvement of a Sb(Zn)-2V(Zn) acceptor complex.
Journal Title
Journal of Applied Physics
Volume
110
Issue/Number
5
Publication Date
1-1-2011
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0021-8979
Recommended Citation
Schwarz, C.; Flitsiyan, E.; Chernyak, L.; Casian, V.; Schneck, R.; Dashevsky, Z.; Chu, S.; and Liu, J. L., "Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires" (2011). Faculty Bibliography 2010s. 1876.
https://stars.library.ucf.edu/facultybib2010/1876
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