Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

    Authors

    J. B. Steighner; J. S. Yuan;Y. D. Liu

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Breakdown voltage; gallium arsenide; gate charge; InGaAs; laterally; diffused metal-oxide-semiconductor (LDMOS); power MOSFET; snapback; specific on-resistance; III-V MOSFETS; LDMOS TRANSISTORS; TECHNOLOGY; VOLTAGE; RF; TRANSCONDUCTANCE; INTERFACES; MOBILITY; SILICON; CHANNEL; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The new approach of implementing a laterally diffused metal- oxide-semiconductor (LDMOS) with In(0.53)Ga(0.47)As is investigated. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using 2-D device simulation. Comparisons are made between In(0.53)Ga(0.47)As and Si LDMOS, showcasing the advantages of In(0.53)Ga(0.47)As LDMOS. Further ON-state analysis of the In(0.53)Ga(0.47)As LDMOS is then provided with a proposed enhanced structure that demonstrates excellent I-V characteristics.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    1

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    180

    Last Page

    189

    WOS Identifier

    WOS:000285840100025

    ISSN

    0018-9383

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