Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability
Abbreviated Journal Title
IEEE Trans. Electron Devices
Breakdown voltage; gallium arsenide; gate charge; InGaAs; laterally; diffused metal-oxide-semiconductor (LDMOS); power MOSFET; snapback; specific on-resistance; III-V MOSFETS; LDMOS TRANSISTORS; TECHNOLOGY; VOLTAGE; RF; TRANSCONDUCTANCE; INTERFACES; MOBILITY; SILICON; CHANNEL; Engineering, Electrical & Electronic; Physics, Applied
The new approach of implementing a laterally diffused metal- oxide-semiconductor (LDMOS) with In(0.53)Ga(0.47)As is investigated. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using 2-D device simulation. Comparisons are made between In(0.53)Ga(0.47)As and Si LDMOS, showcasing the advantages of In(0.53)Ga(0.47)As LDMOS. Further ON-state analysis of the In(0.53)Ga(0.47)As LDMOS is then provided with a proposed enhanced structure that demonstrates excellent I-V characteristics.
Ieee Transactions on Electron Devices
"Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability" (2011). Faculty Bibliography 2010s. 1949.