Title
Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate
Abbreviated Journal Title
J. Nanoelectron. Optoelectron.
Keywords
ZnO Nanorod Arrays; Self-Assembly; Electric Field Assisted Growth; Photoluminescence Properties; ZINC-OXIDE NANORODS; SCATTERING; FILMS; FABRICATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96 degrees C). The results of micro-Raman study are indicative of high crystalline quality of the produced nanorods. The analysis of the photoluminescence properties of the material demonstrates the possibility to control the free carrier concentration by post-growth thermal treatment leading to the formation of compensating centers, while the crystalline quality of the material is not affected.
Journal Title
Journal of Nanoelectronics and Optoelectronics
Volume
6
Issue/Number
4
Publication Date
1-1-2011
Document Type
Article
Language
English
First Page
473
Last Page
477
WOS Identifier
ISSN
1555-130X
Recommended Citation
"Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate" (2011). Faculty Bibliography 2010s. 2018.
https://stars.library.ucf.edu/facultybib2010/2018
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu