Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate

    Authors

    V. V. Ursaki; O. Lupan; I. M. Tiginyanu; G. Chai;L. Chow

    Comments

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    Abbreviated Journal Title

    J. Nanoelectron. Optoelectron.

    Keywords

    ZnO Nanorod Arrays; Self-Assembly; Electric Field Assisted Growth; Photoluminescence Properties; ZINC-OXIDE NANORODS; SCATTERING; FILMS; FABRICATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96 degrees C). The results of micro-Raman study are indicative of high crystalline quality of the produced nanorods. The analysis of the photoluminescence properties of the material demonstrates the possibility to control the free carrier concentration by post-growth thermal treatment leading to the formation of compensating centers, while the crystalline quality of the material is not affected.

    Journal Title

    Journal of Nanoelectronics and Optoelectronics

    Volume

    6

    Issue/Number

    4

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    473

    Last Page

    477

    WOS Identifier

    WOS:000299860600010

    ISSN

    1555-130X

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