Authors

G. P. Wang; S. Chu; N. Zhan; Y. Q. Lin; L. Chernyak;J. L. Liu

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

SCATTERING; Physics, Applied

Abstract

ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

Journal Title

Applied Physics Letters

Volume

98

Issue/Number

4

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000286676600007

ISSN

0003-6951

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