Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature

    Authors

    L. G. Zhang; Y. Fan; S. F. Xu; W. Y. Yang;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Nanosci. Nanotechnol.

    Keywords

    Silicon Nitride; Nanowires; Photoluminescence; Temperature; DANGLING-BOND CENTERS; THIN-FILMS; OPTICAL-PROPERTIES; VISIBLE; PHOTOLUMINESCENCE; POLYMERIC PRECURSOR; 1ST OBSERVATION; POINT-DEFECTS; MICROCAVITIES; NANOBELTS; CREATION; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials; Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.

    Journal Title

    Journal of Nanoscience and Nanotechnology

    Volume

    11

    Issue/Number

    11

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    9795

    Last Page

    9798

    WOS Identifier

    WOS:000298765800083

    ISSN

    1533-4880

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