Temperature dependent charge transport in poly(3-hexylthiophene)-block polystyrene copolymer field-effect transistor

    Authors

    M. Arif; J. H. Liu; L. Zhai;S. I. Khondaker

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Synth. Met.

    Keywords

    Organic transistor; P3HT; Co-polymer; Low temperature transport; Hopping; THIN-FILM TRANSISTORS; DIBLOCK COPOLYMERS; BLOCK-COPOLYMERS; REGIOREGULAR POLYTHIOPHENE; EFFECT MOBILITY; FABRICATION; MORPHOLOGY; INTERFACE; CIRCUITS; POLYMER; Materials Science, Multidisciplinary; Physics, Condensed Matter; Polymer; Science

    Abstract

    Electronic transport of regioregular poly(3-hexylthiophene)-block-poly styrene (rr-P3HT-b-PS) copolymer in field effect transistor (FET) geometry with different surface treatment and different temperature is investigated. The devices show p type behavior with a maximum saturation mobility of 6 x 10(-3) cm(2)/V s and current on/off ratio of 2.6 x 10(4) in an OTS treated sample at room temperature, which is lower compared to the controlled P3HT sample of same molecular weight fabricated with the same surface treatment. The mobility measured at different temperatures (300-150 K) show thermally activated hopping type transport mechanism with gate bias dependent activation energy of 100-270 meV which is higher compared to the reported value of pristine P3HT FET. The higher activation energy in hopping behavior and lower mobility in this block copolymer is caused by insulating PS segments. (C) 2012 Elsevier B.V. All rights reserved.

    Journal Title

    Synthetic Metals

    Volume

    162

    Issue/Number

    17-18

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    1531

    Last Page

    1536

    WOS Identifier

    WOS:000309488200009

    ISSN

    0379-6779

    Share

    COinS