Title

Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature

Authors

Authors

M. Wei; R. C. Boutwell; G. A. Garrett; K. Goodman; P. Rotella;W. V. Schoenfeld

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Mater. Lett.

Keywords

ZnO; Epitaxial growth; Homoepitaxy; Photoluminescence lifetime; Structural; Defects; SINGLE-CRYSTAL; POLAR; Materials Science, Multidisciplinary; Physics, Applied

Abstract

ZnO films were grown on Zn-polar ZnO substrates with 0.5 degrees miscut toward the [1EQ \O(1,-)00] direction by plasma-assisted molecular beam epitaxy (PAMBE). An atomically flat surface with one or two monolayer step height along the [0001] direction was achieved at low. growth temperature. Wet etching of the substrates and ozone exposure reduced defects and improved photoluminescence (PL) lifetime by a factor of two. A 20 min interval between oxygen plasma ignition and growth was found necessary for excellent crystallinity and yielded high PL lifetimes of 0.179 ns. By decreasing the growth temperature in the low temperature range, the growth rate was increased from 0.02 mu m/h to 0.246 mu m/h, and correspondingly PL lifetime was improved by an order of magnitude, from 0.018 ns to 0.3 ns. (c) 2013 Elsevier B.V. All rights reserved.

Journal Title

Materials Letters

Volume

97

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

11

Last Page

14

WOS Identifier

WOS:000317164600004

ISSN

0167-577X

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