Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature

    Authors

    M. Wei; R. C. Boutwell; G. A. Garrett; K. Goodman; P. Rotella;W. V. Schoenfeld

    Comments

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    Abbreviated Journal Title

    Mater. Lett.

    Keywords

    ZnO; Epitaxial growth; Homoepitaxy; Photoluminescence lifetime; Structural; Defects; SINGLE-CRYSTAL; POLAR; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    ZnO films were grown on Zn-polar ZnO substrates with 0.5 degrees miscut toward the [1EQ \O(1,-)00] direction by plasma-assisted molecular beam epitaxy (PAMBE). An atomically flat surface with one or two monolayer step height along the [0001] direction was achieved at low. growth temperature. Wet etching of the substrates and ozone exposure reduced defects and improved photoluminescence (PL) lifetime by a factor of two. A 20 min interval between oxygen plasma ignition and growth was found necessary for excellent crystallinity and yielded high PL lifetimes of 0.179 ns. By decreasing the growth temperature in the low temperature range, the growth rate was increased from 0.02 mu m/h to 0.246 mu m/h, and correspondingly PL lifetime was improved by an order of magnitude, from 0.018 ns to 0.3 ns. (c) 2013 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Letters

    Volume

    97

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    11

    Last Page

    14

    WOS Identifier

    WOS:000317164600004

    ISSN

    0167-577X

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