Title
Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature
Abbreviated Journal Title
Mater. Lett.
Keywords
ZnO; Epitaxial growth; Homoepitaxy; Photoluminescence lifetime; Structural; Defects; SINGLE-CRYSTAL; POLAR; Materials Science, Multidisciplinary; Physics, Applied
Abstract
ZnO films were grown on Zn-polar ZnO substrates with 0.5 degrees miscut toward the [1EQ \O(1,-)00] direction by plasma-assisted molecular beam epitaxy (PAMBE). An atomically flat surface with one or two monolayer step height along the [0001] direction was achieved at low. growth temperature. Wet etching of the substrates and ozone exposure reduced defects and improved photoluminescence (PL) lifetime by a factor of two. A 20 min interval between oxygen plasma ignition and growth was found necessary for excellent crystallinity and yielded high PL lifetimes of 0.179 ns. By decreasing the growth temperature in the low temperature range, the growth rate was increased from 0.02 mu m/h to 0.246 mu m/h, and correspondingly PL lifetime was improved by an order of magnitude, from 0.018 ns to 0.3 ns. (c) 2013 Elsevier B.V. All rights reserved.
Journal Title
Materials Letters
Volume
97
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
11
Last Page
14
WOS Identifier
ISSN
0167-577X
Recommended Citation
"Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature" (2013). Faculty Bibliography 2010s. 2579.
https://stars.library.ucf.edu/facultybib2010/2579
Comments
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