Surface morphologies of homoepitaxial ZnO thin films on non-miscut ZnO substrates

    Authors

    M. Wei; R. C. Boutwell;W. V. Schoenfeld

    Comments

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    Abbreviated Journal Title

    Appl. Surf. Sci.

    Keywords

    Non-miscut ZnO substrates; Molecular beam epitaxy; Homoepitaxy; Atomic; force microscopy; Surface morphology; PULSED-LASER DEPOSITION; MOLECULAR-BEAM EPITAXY; LOW-TEMPERATURE; PLASMA; POLAR; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter

    Abstract

    ZnO thin films were grown on Zn-polar non-miscut ZnO substrates by plasma-assisted molecular beam epitaxy (PAMBE). With an electrostatic ion trap applied to the oxygen plasma source, the etching effect by plasma was significantly reduced. Atomically flat surfaces with one monolayer step height along the [0001] direction were achieved at a low growth temperature of 610 degrees C. Good surface morphology with root mean square (RMS) roughness as small as 0.16 nm was achieved. High oxygen plasma power and low Zn flux were necessary to achieve a step-flow growth mode with a homogeneous surface morphology. It was found that the growth rate and surface RMS roughness decreased with increased growth temperature. (C) 2013 Elsevier B.V. All rights reserved.

    Journal Title

    Applied Surface Science

    Volume

    277

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    263

    Last Page

    267

    WOS Identifier

    WOS:000320208500039

    ISSN

    0169-4332

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