Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor

    Authors

    Y. C. Ferng; L. B. Chang; A. Das; C. C. Lin; C. Y. Cheng; P. Y. Kuei;L. Chow

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Jpn. J. Appl. Phys.

    Keywords

    TRANSISTORS; DIODES; Physics, Applied

    Abstract

    In this paper, a varactor with metal-semiconductor-metal diodes on top of the (NH4)(2)S/P2S5-treated AlGaN/GaN two-dimensional electron gas epitaxial structure (MSM-2DEG) is proposed to the surge protection for the first time. The sulfur-treated MSM-2DEG varactor properties, including current-voltage (I-V), capacitance-voltage (C-V), and frequency response of the proposed surge protection circuit, are presented. To verify its capability of surge protection, we replace the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit with the sulfur-treated MSM-2DEG varactor under the application conditions of system-level surge tests. The measured results show that the proposed surge protection circuit, consisted of a gas discharge arrester (GDA) and a sulfur-treated MSM-2DEG varactor, can suppress an electromagnetic pulse (EMP) voltage of 4000 to 360 V, a reduction of 91%, whereas suppression is to 1780 V, a reduction of 55%, when using only a GDA. (C) 2012 The Japan Society of Applied Physics

    Journal Title

    Japanese Journal of Applied Physics

    Volume

    51

    Issue/Number

    12

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    4

    WOS Identifier

    WOS:000312003100029

    ISSN

    0021-4922

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