Authors

C. F. Lo; L. Liu; T. S. Kang; F. Ren; C. Schwarz; E. Flitsiyan; L. Chernyak; H. Y. Kim; J. Kim; S. P. Yun; O. Laboutin; Y. Cao; J. W. Johnson;S. J. Pearton

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Abbreviated Journal Title

J. Vac. Sci. Technol. B

Keywords

HEMTS; MGO; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 x 10(15) cm(-2). The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 x 10(13) cm(-2), but for the highest dose the drain current and transconductance decreased by, similar to 40% while the reverse gate current increased by a factor of similar to 6. The minority carrier diffusion length was around 1 mu m independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart.

Journal Title

Journal of Vacuum Science & Technology B

Volume

30

Issue/Number

3

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000305042000012

ISSN

1071-1023

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