Mathematical characterization of oxidized crystalline silicon nanowires grown by electroless process

    Authors

    R. G. Mertens;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    Appl. Surf. Sci.

    Keywords

    Silicon; Nanowires; Oxidation; Orientation; THERMAL-OXIDATION; DRY OXYGEN; SI NANOWIRES; QUANTUM DOTS; DEPOSITION; SURFACE; REGIME; ARRAYS; FILM; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter

    Abstract

    Silicon nanowires were created via the electroless etching technique using silver nitrate (AgNO3)/hydrofluoric acid (HF) solution. The prepared raw samples were oxidized for various intervals, so as to have an end result of various nanowire thicknesses. Scanning electron microscope (SEM) images were taken of the original nanowires, the oxidized nanowires and then the oxidized and etched (in HF solution) nanowires. When silicon nanowires are made, the area of exposed silicon undergoes "amplification," a formula for which is provided herein. When silicon nanowires are oxidized, the growth rate of the oxide layer varies according to the crystalline alignment. A formula for a polar plot is provided for illustrating the shape of a silicon nanowire after oxidation for various intervals, based on the Deal-Grove and Massoud models of oxidation. (C) 2012 Elsevier B.V. All rights reserved.

    Journal Title

    Applied Surface Science

    Volume

    258

    Issue/Number

    10

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    4607

    Last Page

    4613

    WOS Identifier

    WOS:000300991400061

    ISSN

    0169-4332

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